US Patent 11929196 Method of making slow wave inductive structure
Patent 11929196 was granted and assigned to Taiwan Semiconductor Manufacturing Company on March, 2024 by the United States Patent and Trademark Office.
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US Patent 11929196 Method of making slow wave inductive structure
A method of making a slow wave inductive structure includes depositing a first dielectric layer over a first substrate. The method further includes forming a first conductive winding in the first dielectric layer. The method further includes bonding a second substrate to the first dielectric layer, wherein the second substrate is physically separated from the first conductive winding, and the second substrate has a thickness ranging from about 50 nanometers (nm) to about 150 nm. The method further includes depositing a second dielectric layer over the second substrate. The method further includes forming a second conductive winding in the second dielectric layer, wherein the second substrate is physically separated from the second conductive winding.
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