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US Patent 11929422 Passivation layers for semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 29, 2022
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Date of Patent
March 12, 2024
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Patent Application Number
17876816
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Patent Citations
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US Patent 9093530 Fin structure of FinFET
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9564522 Nanowire structures having non-discrete source and drain regions
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 9881838 Semiconductor devices having multiple gate structures and methods of manufacturing such devices
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US Patent 10037921 Structure and formation method of fin-like field effect transistor
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•••
Patent Inventor Names
Cheng-Yi Peng
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Ching-Hua Lee
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Song-Bor Lee
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11929422
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Patent Primary Examiner
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David C Spalla
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CPC Code
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H01L 29/7853
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H01L 21/02603
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H01L 21/28141
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H01L 21/823431
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H01L 21/823821
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H01L 21/845
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H01L 27/0886
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H01L 27/0924
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H01L 27/10879
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H01L 27/1211
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•••

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