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US Patent 11935923 Lateral bipolar transistor with gated collector

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
November 12, 2021
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Date of Patent
March 19, 2024
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Patent Application Number
17525256
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Patent Citations
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US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor
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US Patent 9105680 Insulated gate bipolar transistor
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US Patent 8586441 Germanium lateral bipolar junction transistor
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US Patent 10014397 Bipolar junction transistors with a combined vertical-lateral architecture
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US Patent 6982442 Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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Patent Inventor Names
Mankyu Yang
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Jagar Singh
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Judson R. Holt
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Alexander Derrickson
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Vibhor Jain
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11935923
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Patent Primary Examiner
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Raj R Gupta
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CPC Code
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H01L 29/1008
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H01L 29/0649
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H01L 29/0653
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