Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chung-Te Lin0
Katherine H. Chiang0
Neil Quinn Murray0
Ming-Yen Chuang0
Date of Patent
March 19, 2024
0Patent Application Number
172431020
Date Filed
April 28, 2021
0Patent Primary Examiner
CPC Code
Patent abstract
A transistor device includes a first source/drain region and a second source/drain region spaced apart from each other; a channel layer electrically connected to the first and second source/drain regions; a gate insulator layer; a gate electrode isolated from the channel layer by the gate insulator layer; and a UV-attenuating layer disposed on the channel layer to protect the channel layer from characteristic degradation caused by UV light.
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