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US Patent 11942180 Memory system

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Is a
Patent
Patent
0

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
119421800
Patent Inventor Names
Akio Sugahara0
Yuji Nagai0
Hisashi Fujikawa0
Zhao Lyu0
Takehisa Kurosawa0
Date of Patent
March 26, 2024
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Patent Application Number
178091140
Date Filed
June 27, 2022
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Patent Citations
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US Patent 9471484 Flash memory controller having dual mode pin-out
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US Patent 10720208 Semiconductor memory device
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US Patent 9666245 Device having multiple channels with calibration circuit shared by multiple channels
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US Patent 11372593 Nonvolatile memory device supporting high-efficiency I/O interface
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US Patent 8817558 Information processing system including semiconductor device having self-refresh mode
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US Patent 9396775 Semiconductor memory device including a control circuit and at least two memory cell arrays
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Patent Primary Examiner
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Son L. Mai
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CPC Code
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G11C 8/06
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G11C 7/109
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G11C 7/1039
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G11C 7/1063
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Patent abstract

A memory system includes semiconductor memory devices and a control device. Each of the semiconductor memory devices includes a first pad to which a first signal is input, a second pad to which a second signal is input, a third pad to which a third signal is input, a memory cell array, a sense amplifier, and a data register. In a first mode, after the first signal is switched, a command set instructing a data out operation is input via the second pad. In a second mode, after the first signal is switched, the command is input via at least the third pad. The control device executes a first operation assigning different addresses to the respective semiconductor memory devices and a second operation causing the modes of the respective semiconductor memory devices to be switched from the first to the second mode.

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