US Patent 11942472 High-voltage electrostatic discharge devices

The present disclosure relates to semiconductor structures and, more particularly, to high-voltage electrostatic discharge (ESD) devices and methods of manufacture. The structure includes a vertical silicon-controlled rectifier (SCR) connecting to an anode, and includes a buried layer of a first dopant type in electrical contact with an underlying buried layer a second dopant type split with an isolation region of the first dopant type within a substrate.