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US Patent 11942549 Semiconductor device and method of manufacture

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 12, 2022
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Date of Patent
March 26, 2024
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Patent Application Number
18064562
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Patent Citations
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US Patent 10748808 Dielectric gap-filling process for semiconductor device
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US Patent 10957585 Semiconductor device and method of forming the same
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US Patent 10790198 Fin structures
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US Patent 11069812 Fin field-effect transistor device and method of forming the same
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US Patent 8563373 Semiconductor device having vertical channels and method of manufacturing the same
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US Patent 9530779 Semiconductor device and method for fabricating the same
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Patent Inventor Names
Chunyao Wang
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Chi On Chui
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Yu-Cheng Shiau
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Wan-Yi Kao
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Yung-Cheng Lu
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Chih-Tang Peng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11942549
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Patent Primary Examiner
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Earl N Taylor
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CPC Code
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H01L 29/517
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H01L 29/66545
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H01L 29/66795
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H01L 29/66818
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H01L 21/76227
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H01L 21/76224
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H01L 29/6656
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H01L 21/823468
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H01L 29/0665
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H01L 21/823878
0
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