Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Robert C. Ionescu0
Chueh Liu0
Date of Patent
April 2, 2024
0Patent Application Number
180804970
Date Filed
December 13, 2022
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A method for forming a porous silicon material can include forming a mixture of silicon, carbon, and an etchant element, solidifying the mixture, removing the etchant element to form pores within the silicon material. The porous silicon material can include a distribution of pores with an average pore diameter between about 10 nm and 500 nm, wherein the silicon particle comprises a silicon carbon composite comprising 1-5% carbon by mass, 1-5% oxygen by mass, and 90-98% silicon by mass.
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