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US Patent 11948644 Two-part programming of memory cells

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
December 20, 2021
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Date of Patent
April 2, 2024
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Patent Application Number
17555728
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Patent Citations
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US Patent 8059456 Programming a NAND flash memory with reduced program disturb
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US Patent 7839678 NAND type flash memory and write method of the same
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US Patent 7920420 Multi bit flash memory device and method of programming the same
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US Patent 6876577 Programming method of nonvolatile semiconductor memory device
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US Patent 7224624 Page buffer for nonvolatile semiconductor memory device and method of operation
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US Patent 7301817 Method for programming of multi-state non-volatile memory using smart verify
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US Patent 7474561 Variable program voltage increment values in non-volatile memory program operations
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US Patent 7539052 Non-volatile multilevel memory cell programming
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US Patent 7602650 Flash memory device and method for programming multi-level cells in the same
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US Patent 7639533 Multi-level memory cell programming methods
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•••
Patent Inventor Names
Vishal Sarin
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Allahyar Vahidimowlavi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11948644
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Patent Primary Examiner
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Vanthu T Nguyen
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CPC Code
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G11C 16/0458
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G11C 16/3418
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G11C 16/3427
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G11C 2211/562
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G11C 11/5628
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G11C 2211/5642
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G11C 2211/5648
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G11C 16/10
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G11C 2211/5622
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G11C 16/0408
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