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US Patent 11948829 FinFET circuit devices with well isolation
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Patent
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Date Filed
February 28, 2022
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Date of Patent
April 2, 2024
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Patent Application Number
17682425
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Patent Citations
US Patent 10727343 Semiconductor device having fin structures
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US Patent 10319581 Cut metal gate process for reducing transistor spacing
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US Patent 10522417 FinFET device with different liners for PFET and NFET and method of fabricating thereof
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US Patent 8772109 Apparatus and method for forming semiconductor contacts
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9147730 Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process
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•••
Patent Inventor Names
Chih-Chuan Yang
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Chang-Ta Yang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11948829
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Patent Primary Examiner
Telly D Green
0
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