Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wan-Yi Kao0
Chung-Chi Ko0
Date of Patent
April 2, 2024
0Patent Application Number
176600970
Date Filed
April 21, 2022
0Patent Citations
Patent Primary Examiner
Patent abstract
A method includes forming a dummy gate stack over a semiconductor region of a wafer, and depositing a gate spacer layer using Atomic Layer Deposition (ALD) on a sidewall of the dummy gate stack. The depositing the gate spacer layer includes performing an ALD cycle to form a dielectric atomic layer. The ALD cycle includes introducing silylated methyl to the wafer, purging the silylated methyl, introducing ammonia to the wafer, and purging the ammonia.
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