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US Patent 11955380 Conductive element for semiconductor devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
November 18, 2022
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Date of Patent
April 9, 2024
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Patent Application Number
18057158
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Patent Citations
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US Patent 10950497 Electrical connection for semiconductor devices
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US Patent 10141260 Interconnection structure and method for forming the same
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US Patent 10163651 Structure and method to expose memory cells with different sizes
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US Patent 7740459 Micropump having a pump diaphragm and a polysilicon layer
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US Patent 8164190 Structure of power grid for semiconductor devices and method of making the same
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US Patent 8614126 Method of making a three-dimensional memory array with etch stop
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US Patent 8703604 Creation of vias and trenches with different depths
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US Patent 9373699 Semiconductor devices with field plates
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US Patent 9627318 Interconnect structure with footing region
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US Patent 9911645 Method for forming fin field effect transistor (FinFET) device structure with interconnect structure
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Patent Inventor Names
Jyh-Huei Chen
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Kuo-Chiang Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11955380
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Patent Primary Examiner
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Nicholas J Tobergte
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CPC Code
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H01L 21/32133
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H01L 21/31116
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H01L 21/7684
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H01L 21/31111
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H01L 21/3212
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H01L 21/76802
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H01L 21/76877
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H01L 21/0274
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H01L 23/5226
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