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US Patent 11961912 Merged source/drain features

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
June 6, 2022
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Date of Patent
April 16, 2024
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Patent Application Number
17833356
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Patent Citations
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US Patent 8847293 Gate structure for semiconductor device
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US Patent 8853025 FinFET/tri-gate channel doping for multiple threshold voltage tuning
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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy
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US Patent 9093514 Strained and uniform doping technique for FINFETs
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9520482 Method of cutting metal gate
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US Patent 11355641 Merged source/drain features
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US Patent 8836016 Semiconductor structures and methods with high mobility and high energy bandgap materials
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•••
Patent Inventor Names
Feng-Cheng Yang
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Wei-Yuan Lu
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Li-Li Su
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Tzu-Ching Lin
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Chun-An Lin
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11961912
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Patent Primary Examiner
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Thinh T Nguyen
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CPC Code
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G01N 33/4915
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H01L 21/0265
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H01L 21/823814
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H01L 21/823878
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H01L 29/785
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H01L 21/0243
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H01L 29/66795
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