Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Gary Bela Bronner0
Zhichao Lu0
Date of Patent
April 16, 2024
0Patent Application Number
181144190
Date Filed
February 27, 2023
0Patent Citations
...
Patent Primary Examiner
CPC Code
Patent abstract
Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.
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