Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Minrui Yu0
He Ren0
Mehul Naik0
Date of Patent
April 23, 2024
0Patent Application Number
165116270
Date Filed
July 15, 2019
0Patent Citations
Patent Primary Examiner
Patent abstract
Methods for forming a nickel silicide material on a substrate are disclosed. The methods include depositing a first nickel silicide seed layer atop a substrate at a temperature of about 15° C. to about 27° C., annealing the first nickel silicide seed layer at a temperature of 400° C. or less such as over 350° C.; and depositing a second nickel silicide layer atop the first nickel silicide seed layer at a temperature of about 15° C. to about 27° C. to form the nickel silicide material.
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