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US Patent 11967635 Lateral bipolar transistor
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Patent
0
Date Filed
November 23, 2021
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Date of Patent
April 23, 2024
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Patent Application Number
17533805
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Patent Citations
US Patent 9252233 Air-gap offset spacer in FinFET structure
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US Patent 7897995 Lateral bipolar junction transistor with reduced base resistance
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US Patent 7932166 Field effect transistor having a stressed contact etch stop layer with reduced conformality
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US Patent 8288758 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8420493 SOI SiGe-base lateral bipolar junction transistor
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US Patent 8669640 Bipolar transistor
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US Patent 6940149 Structure and method of forming a bipolar transistor having a void between emitter and extrinsic base
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US Patent 6972466 Bipolar transistors with low base resistance for CMOS integrated circuits
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Patent Inventor Names
Jagar Singh
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Randy L. Wolf
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11967635
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Patent Primary Examiner
Natalia A Gondarenko
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CPC Code
H01L 21/823493
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H01L 21/823475
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H01L 21/823468
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H01L 21/82285
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H01L 21/823821
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H01L 21/04
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H01L 21/8222
0
H01L 21/8229
0
H01L 21/8249
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H01L 2924/1305
0
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