Patent attributes
A nonvolatile memory includes a first memory cell and a second memory cell above the first memory cell. The first memory cell includes a variable resistance layer extending in a first direction, a semiconductor layer extending in the first direction and in contact with the variable resistance layer, an insulator layer extending in the first direction and in contact with the semiconductor layer, and a first voltage applying electrode extending in a second direction and in contact with the insulator layer. The second memory cell includes a second voltage applying electrode in contact with the insulator layer. When a write operation is performed on the first memory cell, a first voltage is applied to the second voltage applying electrode, and when a write operation is performed on the second memory cell, a second voltage, lower than the first voltage, is applied to the first voltage applying electrode.
