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US Patent 11972811 Methods and apparatus for NAND flash memory

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Is a
Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119728110
Patent Inventor Names
Fu-Chang Hsu0
Date of Patent
April 30, 2024
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Patent Application Number
174461650
Date Filed
August 26, 2021
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Patent Citations
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US Patent 7751242 NAND memory device and programming methods
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US Patent 7827348 High performance flash memory devices (FMD)
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US Patent 8891311 Semiconductor memory device and method of programming the same
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US Patent 8917556 Nonvolatile memory device having 3D memory cell array and read method
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US Patent 8937833 Semiconductor memory device including memory cells and a peripheral circuit and method of operating the same
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US Patent 9218874 Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping
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US Patent 9858993 Non-volatile memory device and method of programming the same
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US Patent 10121551 Detecting power loss in NAND memory devices
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Patent Primary Examiner
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Thong Q Le
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CPC Code
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G11C 11/005
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G11C 11/5671
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G11C 16/34
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G11C 7/1057
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G11C 7/1069
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G11C 7/1084
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G11C 16/16
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G11C 16/3404
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Patent abstract

Methods and apparatus for NAND flash memory are disclosed. In an embodiment, a NAND flash memory is provided that includes a plurality of bit lines connected to a plurality of bit line select gates, respectively, and a page buffer connected to the plurality of bit line select gates. The NAND flash memory also includes a plurality of load devices connected to the plurality of bit lines, respectively. The plurality of load devices are configured to provide load current during read operations.

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