US Patent 11973127 Semiconductor structure with source/drain structure having modified shape
Patent 11973127 was granted and assigned to Taiwan Semiconductor Manufacturing Company on April, 2024 by the United States Patent and Trademark Office.
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US Patent 11973127 Semiconductor structure with source/drain structure having modified shape
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Patent abstract
Semiconductor structures and method for forming the same are provide. The semiconductor structure includes a fin structure protruding from a substrate and a gate structure formed across the fin structure. The semiconductor structure further includes an Arsenic-doped region formed in the fin structure and a source/drain structure formed over the Arsenic-doped region. In addition, a bottommost portion of the Arsenic-doped region is lower than a bottommost portion of the source/drain structure.
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng-Han Lee0
Huai-Tei Yang0
Shahaji B. More0
Shih-Chieh Chang0
Date of Patent
April 30, 2024
0Patent Application Number
170891380
Date Filed
November 4, 2020
0Patent Citations
0
Patent Primary Examiner
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