US Patent 11980035 Three-dimensional memory devices and methods of manufacturing thereof

A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and is in contact with the first memory film. Ends of the first semiconductor film align with ends of the first memory film, respectively. The semiconductor device includes a second conductor structure extending along the vertical direction. The semiconductor device includes a third conductor structure extending along the vertical direction. The semiconductor device includes a fourth conductor structure extending along the vertical direction. The second and fourth conductor structures are coupled to the ends of the first semiconductor film, and the third conductor structure is coupled to a portion of the first semiconductor film between its ends.