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US Patent 11980104 Magnetic memory device

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
December 10, 2020
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Date of Patent
May 7, 2024
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Patent Application Number
17117813
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Patent Citations
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US Patent 9147833 Hybridized oxide capping layer for perpendicular magnetic anisotropy
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US Patent 10541014 Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same
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US Patent 10573688 Magnetic junction device having an inter-layer stack between a hard magnetic layer and a reference layer, and associated magnetic random access memory
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US Patent 10692927 Double MTJ stack with synthetic anti-ferromagnetic free layer and AlN bottom barrier layer
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US Patent 10707268 Magnetoresistive element and magnetic memory
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US Patent 10833253 Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices
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US Patent 11177431 Magnetic memory device and method for manufacturing the same
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US Patent 11251367 Composite multi-stack seed layer to improve PMA for perpendicular magnetic pinning
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US Patent 11302372 MTJ stack containing a top magnetic pinned layer having strong perpendicular magnetic anisotropy
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US Patent 11450466 Composite seed structure to improve PMA for perpendicular magnetic pinning
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•••
Patent Inventor Names
Masaru Toko
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Masahiko Nakayama
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Soichi Oikawa
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Hideyuki Sugiyama
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11980104
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Patent Primary Examiner
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Jay C Kim
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CPC Code
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H01L 27/224
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H01L 43/08
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