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US Patent 11982016 Method for growing beta-Ga
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US Patent 11982016 Method for growing beta-Ga
Article
Patent abstract
As one embodiment, the present invention provides a method for growing a β-Ga
Infobox
Is a
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11982016
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Patent Inventor Names
Akinori Koukitu
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Hisashi Murakami
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Ken Goto
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Kohei Sasaki
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Yoshinao Kumagai
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Date of Patent
May 14, 2024
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Patent Application Number
17471395
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Date Filed
September 10, 2021
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Patent Citations
US Patent 7176115 Method of manufacturing Group III nitride substrate and semiconductor device
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US Patent 7951685 Method for manufacturing semiconductor epitaxial crystal substrate
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US Patent 9245749 Method of forming Ga2O3-based crystal film and crystal multilayer structure
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US Patent 9281180 Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal
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US Patent 9461124 Ga
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US Patent 10676841 Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
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Patent Primary Examiner
Irina Krylova
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CPC Code
C30B 25/165
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