US Patent 11984347 Semiconductor structure and method for forming same

A semiconductor structure and a method for forming the same are provided. The method for forming a semiconductor structure includes the following operations. A substrate is provided. A dielectric layer having a first trench is formed on the substrate. A first filling layer is formed for partially filling the first trench. A first mask layer having a first opening is formed on the dielectric layer. The first opening exposes the first filling layer and part of the dielectric layer. The dielectric is etched by taking the first mask layer as a mask to form a second trench. The first filling layer is removed. And, conductive materials are formed in the first trench and the second trench.