US Patent 11984400 Method of fabricating a semiconductor device including multiple contacts

An SRAM device and method of forming include pass gate (PG), pull-down (PD), and pull-up (PU) transistors. A first gate line of the PG and a second gate line of the PD and the PU extend in a first direction. A common source/drain of the PG, PD, and PU transistors interposes the first and second gate lines and another source/drain of the PG transistor. A first contact extends from the common source/drain and a second contact extends from the another source/drain. A third contact is disposed above the second contact with a first width in the first direction and a first length in a second direction, first length being greater than the first width.