Patent attributes
A method includes forming isolation regions extending into a semiconductor substrate, and forming a first plurality of protruding fins and a second protruding fin over the isolation regions. The first plurality of protruding fins include an outer fin farthest from the second protruding fin, and an inner fin closest to the second protruding fin. The method further includes etching the first plurality of protruding fins to form first recesses, growing first epitaxy regions from the first recesses, wherein the first epitaxy regions are merged to form a merged epitaxy region, etching the second protruding fin to form a second recess, and growing a second epitaxy region from the second recess. A top surface of the merged epitaxy region is lower on a side facing toward the second epitaxy region than on a side facing away from the second epitaxy region.
