US Patent 11990468 MOSFET-based RF switch with improved ESD robustness
Patent 11990468 was granted and assigned to Infineon Technologies on May, 2024 by the United States Patent and Trademark Office.
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US Patent 11990468 MOSFET-based RF switch with improved ESD robustness
Article
Patent abstract
An RF switch device includes transistors coupled in series forming an RF conductive current path; a first resistive bias network forming a DC conductive bias path between gate nodes of the plurality of transistors; and a first ESD bias component coupled between the RF conductive current path and the first resistive bias network, wherein the first ESD bias component provides a DC conductive path between the RF conductive current path of the RF switch device and the first resistive bias network during an ESD event.
Infobox
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Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Mirko Scholz0
Semen Syroiezhin0
Valentyn Solomko0
Date of Patent
May 21, 2024
0Patent Application Number
178216150
Date Filed
August 23, 2022
0Patent Citations
Patent Primary Examiner
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