Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yu Ru Huang0
Jifeng Zhu0
Zhenyu Lu0
Yongna Li0
Jun Chen0
Xiaowang Dai0
Qian Tao0
Yushi Hu0
...
Date of Patent
May 21, 2024
0Patent Application Number
170159570
Date Filed
September 9, 2020
0Patent Citations
Patent Primary Examiner
CPC Code
Patent abstract
A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a plurality of channel holes penetrating the alternating dielectric stack; forming a channel structure in each channel hole; forming a channel column structure on the channel structure in each channel hole; trimming an upper portion of each channel column structure to form a channel plug; and forming a top selective gate cut between neighboring channel plugs.
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