Patent attributes
A method of manufacturing a semiconductor device includes forming a gate electrode overlying a gate dielectric layer covering both a channel region in a second semiconductor region and a portion of a first semiconductor region. First-type dopants are implemented into the second semiconductor region masked by a hard mask to form a source precursor region. The method also includes forming a spacer which overlies the source precursor region and has a first side laterally adjacent to the gate electrode, and recessing a surface region in the source precursor region masked by the spacer to form a source region. The method still includes implanting second-type dopants through the surface region masked at least by the spacer to form a body contact region, and forming a conformal conductive layer covering an upper surface of the body contact region and a side surface of the source.
