US Patent 11996480 Vertical transistor with late source/drain epitaxy

Patent

US Patent 9190417 Fin-like field effect transistor (FinFET) device and method of manufacturing same

US Patent 9685381 Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon

US Patent 9728466 Vertical field effect transistors with metallic source/drain regions

US Patent 9773913 Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance

US Patent 10217846 Vertical field effect transistor formation with critical dimension control

US Patent 10396208 Vertical transistors with improved top source/drain junctions

US Patent 10461173 Methods, apparatus, and manufacturing system for forming source and drain regions in a vertical field effect transistor

US Patent 10453940 Vertical field effect transistor with strained channel region extension

US Patent 10727339 Selectively regrown top contact for vertical semiconductor devices

US Patent 8759844 Semiconductor device having elevated source and drain

United States Patent and Trademark Office

Mohammad M Hoque

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