Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Atsushi Hachiya0
Tomohisa Aoki0
Hiroaki Furukawa0
Yuhichi Saitoh0
Date of Patent
May 28, 2024
0Patent Application Number
176033140
Date Filed
April 26, 2019
0Patent Primary Examiner
Patent abstract
A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.
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