US Patent 12009250 Semiconductor device and a method making the same

A method for manufacturing a semiconductor structure includes: providing a substrate, the substrate includes a plurality of first trenches and a first pattern having an array of lines each formed between adjacent two of the plurality of first trenches; forming a first dielectric layer to cover at least the sidewalls of each of the lines in the array of the first pattern; and each of the lines in the array of the first pattern is segmented to form elements of a second pattern.