Patent attributes
A monolithic integrated proximity sensor device includes a semiconductor substrate with an active surface with at least one active or passive component or bond pad; an interconnection stack having a plurality of at least two metal layers; at least a first transmitter coil having a first spiral course with at least three turns formed in at least one or at least two metal layers and defining the first region having a first inner and outer periphery; at least a first receiver coil having a second spiral course with at least three turns formed in at least one or at least two metal layers and defining a second region having a second inner and outer periphery. At least one component or bond pad is located inside the first or second inner periphery.
