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US Patent 12020937 Carbon implantation for thicker gate silicide

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 23, 2022
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Date of Patent
June 25, 2024
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Patent Application Number
17701759
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Patent Citations
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US Patent 10629443 Bottom source/drain silicidation for vertical field-effect transistor (FET)
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US Patent 10297601 Semiconductor devices with layers commonly contacting fins and methods of manufacturing the same
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US Patent 10825740 Low resistance source-drain contacts using high temperature silicides
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US Patent 8546259 Nickel silicide formation for semiconductor components
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US Patent 8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide
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Patent Inventor Names
Man Gu
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Jianwei Peng
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Hong Yu
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Eric S. Kozarsky
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12020937
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 21/26506
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H01L 21/84
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H01L 21/28518
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H01L 29/45
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H01L 29/4933
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H01L 21/28052
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