US Patent 12021057 Semiconductor structure and semiconductor die
Patent 12021057 was granted and assigned to Taiwan Semiconductor Manufacturing Company on June, 2024 by the United States Patent and Trademark Office.
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US Patent 12021057 Semiconductor structure and semiconductor die
A semiconductor structure including a first semiconductor die and a second semiconductor die is provided. The first semiconductor die includes a first bonding structure. The second semiconductor die is bonded to the first bonding structure of the first semiconductor die. The first bonding structure includes a first dielectric layer, a second dielectric layer covering the first dielectric layer, and first conductors embedded in the first dielectric layer and the second dielectric layer, wherein each of the first conductors includes a first conductive barrier layer covering the first dielectric layer and a first conductive pillar disposed on the first conductive barrier layer, and the first conductive pillars are in contact with the second dielectric layer.
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