US Patent 12026601 Stacked artificial neural networks

An apparatus, such as a stacked artificial neural network, can include a semiconductor at a first level. The semiconductor can include first circuitry. A memory can be at a second level. Second circuitry can be at a third level such that the memory is between the first circuitry and the second circuitry. The first circuitry can be configured propagate a first signal to the memory. The memory can be configured to propagate a second signal, based on data stored in the memory, to the second circuitry in response to the first signal. The second circuitry can be configured to generate a data signal based on the second signal.