Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Naomi Yoshida0
Mandyam Sriram0
Ilanit Fisher0
Shih Chung Chen0
Wen Ting Chen0
Kedi Wu0
Chi-Chou Lin0
Chenfei Shen0
...
Date of Patent
August 13, 2024
0Patent Application Number
173394540
Date Filed
June 4, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.
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