Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yen-Ming Chen0
Shahaji B. More0
Cheng-Yi Peng0
Wei-Yang Lee0
Jian-Hao Chen0
Kuo-Feng Yu0
Ya-Yun Cheng0
Chun Hsiung Tsai0
Date of Patent
August 20, 2024
0Patent Application Number
172400270
Date Filed
April 26, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A semiconductor device includes a substrate; an isolation structure over the substrate; a fin over the substrate and the isolation structure; a gate structure engaging a first portion of the fin; first sidewall spacers over sidewalls of the gate structure and over a second portion of the fin; source/drain (S/D) features adjacent to the first sidewall spacers; and second sidewall spacers over the isolation structure and over sidewalls of a portion of the S/D features. The second sidewall spacers include silicon oxide, silicon nitride, or silicon oxynitride. The second sidewall spacers and the second portion of the fin include a same dopant, wherein the dopant includes phosphorus.
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