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US Patent 12068392 FinFET fabrication methods

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 14, 2022
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Date of Patent
August 20, 2024
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Patent Application Number
17654807
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Patent Citations
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US Patent 8816444 System and methods for converting planar design to FinFET design
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US Patent 8823065 Contact structure of semiconductor device
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US Patent 8860148 Structure and method for FinFET integrated with capacitor
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US Patent 9105490 Contact structure of semiconductor device
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9520482 Method of cutting metal gate
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US Patent 9236300 Contact plugs in SRAM cells and the method of forming the same
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 8772109 Apparatus and method for forming semiconductor contacts
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US Patent 8785285 Semiconductor devices and methods of manufacture thereof
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Patent Inventor Names
Cheng-Yi Peng
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Shahaji B. More
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Da-Wen Lin
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Jian-Hao Chen
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Kuo-Feng Yu
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Yin-Pin Wang
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Chun Hsiung Tsai
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12068392
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Patent Primary Examiner
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Thanhha S. Pham
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CPC Code
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H01L 21/76855
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H01L 21/76853
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H01L 21/76861
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H01L 21/76862
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H01L 21/76864
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H01L 21/76897
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H01L 21/2236
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H01L 21/2652
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H01L 21/2656
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H01L 21/324
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