US Patent 12074033 Plasma processing method
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US Patent 12074033 Plasma processing method
Article
Patent abstract
In a plasma processing method for plasma etching a silicon film or polysilicon film containing boron, the polysilicon film containing boron is etched by using a mixed gas of a halogen gas, a fluorine-containing gas, and a boron trichloride gas. According to plasma processing method, it is possible to improve the etching rate and reduce etching defects when plasma etching a silicon film or polysilicon film containing boron.
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Chaomei Liu0
Hitoshi Kobayashi0
Masahito Mori0
Ryota Takahashi0
Date of Patent
August 27, 2024
0Patent Application Number
174397650
Date Filed
December 23, 2020
0Patent Citations
Patent Primary Examiner
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