Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
David D. Smith0
Date of Patent
August 27, 2024
0Patent Application Number
175297190
Date Filed
November 18, 2021
0Patent Citations
...
Patent Primary Examiner
Patent abstract
A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched.
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