US Patent 12080521 Plasma processing method
Patent 12080521 was granted and assigned to Tokyo Electron on September, 2024 by the United States Patent and Trademark Office.
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US Patent 12080521 Plasma processing method
Article
Patent abstract
A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.
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Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Michiko Nakaya0
Taku Gohira0
Yuya Minoura0
Date of Patent
September 3, 2024
0Patent Application Number
182204030
Date Filed
July 11, 2023
0Patent Citations
Patent Primary Examiner
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