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US Patent 12080637 Through-hole electrode substrate

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
April 21, 2022
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Date of Patent
September 3, 2024
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Patent Application Number
17725627
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Patent Citations
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US Patent 10256176 Through-hole electrode substrate and semiconductor device using through-hole electrode substrate
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US Patent 8504964 Through-hole layout apparatus that reduces differences in layout density of through-holes
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US Patent 10790221 Through-hole electrode substrate
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US Patent 7646079 Semiconductor device, method of manufacturing the same, circuit board, and method of manufacturing the same
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US Patent 8338957 Low resistance through-wafer via
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Patent Inventor Names
Hidenori Yoshioka
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Sumio Koiwa
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Satoru Kuramochi
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12080637
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Patent Primary Examiner
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Dale E Page
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CPC Code
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H01L 25/065
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H01L 23/481
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H01L 23/49827
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