Patent attributes
A photoelectric conversion apparatus includes a first chip including a first semiconductor element layer and a second chip including a second semiconductor element layer, the first chip and the second chip are bonded by a plurality of metal bonding portions between the first semiconductor element layer and the second semiconductor element layer, the plurality of pixel circuits includes a first pixel block including n (n is an integer of 3 or more) pixel circuits, and a second pixel block, the plurality of metal bonding portions includes a first metal bonding portion connecting the first semiconductor element layer and the second semiconductor element layer, and the number of the first metal bonding portions arranged at positions overlapping the first pixel block in a planar view is smaller than the number of the first metal bonding portions arranged at positions overlapping the second pixel block in a planar view.
