US Patent 12080768 Transistor, semiconductor structure, and manufacturing method thereof
Patent 12080768 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2024 by the United States Patent and Trademark Office.
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US Patent 12080768 Transistor, semiconductor structure, and manufacturing method thereof
Article
Patent abstract
A transistor includes a gate electrode, a gate dielectric layer covering the gate electrode, an active layer covering the gate dielectric layer and including a first metal oxide material, and source/drain electrodes disposed on the active layer and made of a second metal oxide material with an electron concentration of at least about 10
Infobox
Is a
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chang-Lin Yang0
Katherine H. Chiang0
Mauricio Manfrini0
Ming-Yen Chuang0
Date of Patent
September 3, 2024
0Patent Application Number
174070970
Date Filed
August 19, 2021
0Patent Citations
Patent Primary Examiner
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