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US Patent 12085867 Lithography process monitoring method
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Patent
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Date Filed
July 27, 2023
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Date of Patent
September 10, 2024
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Patent Application Number
18360618
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Patent Citations
US Patent 8796666 MOS devices with strain buffer layer and methods of forming the same
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US Patent 8837810 System and method for alignment in semiconductor device fabrication
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US Patent 9093530 Fin structure of FinFET
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US Patent 9134633 System and method for dark field inspection
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US Patent 9230867 Structure and method for E-beam in-chip overlay mark
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US Patent 9404743 Method for validating measurement data
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US Patent 9304403 System and method for lithography alignment
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 8716841 Photolithography mask and process
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US Patent 8736084 Structure and method for E-beam in-chip overlay mark
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Patent Inventor Names
Shih-Chun Huang
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Ru-Gun Liu
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Yung-Sung Yen
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Shih-Ming Chang
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Ken-Hsien Hsieh
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Chih-Jie Lee
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
12085867
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Patent Primary Examiner
Christopher G Young
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CPC Code
G03F 7/2041
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G03F 7/2004
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G03F 9/7026
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