Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chen Zhang0
Kangguo Cheng0
Julien Frougier0
Ruilong Xie0
Heng Wu0
Date of Patent
September 10, 2024
0Patent Application Number
173947010
Date Filed
August 5, 2021
0Patent Citations
Patent Primary Examiner
Patent abstract
A complementary metal-oxide semiconductor device formed by fabricating CMOS nanosheet stacks, forming a dielectric pillar dividing the CMOS nanosheet stacks, forming CMOS FET pairs on either side of the dielectric pillar, and forming a gate contact for at least one of the FETs.
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