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US Patent 12087819 Dual channel structure

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
July 22, 2022
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Date of Patent
September 10, 2024
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Patent Application Number
17814276
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Patent Citations
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US Patent 10411135 Substrates and transistors with 2D material channels on 3D geometries
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US Patent 10388732 Nanosheet field-effect transistors including a two-dimensional semiconducting material
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US Patent 9768313 Devices having transition metal dichalcogenide layers with different thicknesses and methods of manufacture
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Patent Inventor Names
Keng-Chu Lin
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Tzer-Min Shen
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Dhanyakumar Mahaveer Sathaiya
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Mrunal Abhijith Khaderbad
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12087819
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Patent Primary Examiner
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Dao H Nguyen
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CPC Code
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H01L 29/66439
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H01L 29/78696
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H01L 21/823807
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H01L 21/823821
0
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H01L 21/823878
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H01L 21/823412
0
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H01L 27/0924
0
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H01L 27/088
0
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H01L 27/092
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H01L 29/42392
0
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