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US Patent 12087861 FinFETs and methods of forming FinFETs

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 25, 2022
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Date of Patent
September 10, 2024
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Patent Application Number
17814681
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Patent Citations
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US Patent 8377779 Methods of manufacturing semiconductor devices and transistors
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US Patent 8399931 Layout for multiple-fin SRAM cell
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US Patent 8652894 Method for fabricating a FinFET device
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US Patent 8686516 Silicide formation and associated devices
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US Patent 8716765 Contact structure of semiconductor device
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US Patent 8723272 FinFET device and method of manufacturing same
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US Patent 8729627 Strained channel integrated circuit devices
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US Patent 8735993 FinFET body contact and method of making same
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US Patent 8736056 Device for reducing contact resistance of a metal
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US Patent 8772109 Apparatus and method for forming semiconductor contacts
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•••
Patent Inventor Names
Tai-Chun Huang
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Tien-I Bao
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Chin-Hsiang Lin
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12087861
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Patent Primary Examiner
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Mark V. Prenty
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CPC Code
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H01L 29/785
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H01L 21/76897
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H01L 21/823431
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