Patent 12088091 was granted and assigned to ChangXin Memory Technologies on September, 2024 by the United States Patent and Trademark Office.
The present disclosure provides an electrostatic discharge (ESD) protection circuit for a chip, including: a monitoring unit, configured to generate a trigger signal when there is an ESD pulse on a power supply pad; a plurality of controllable drive units, connected to the monitoring unit, and each of the controllable drive units being configured to switch an operating state under a control of a control signal, wherein the operating state includes an output state, and the output state refers to generating a drive signal according to the trigger signal; and a discharge transistor, connected to the plurality of controllable drive units, and configured to be turned on under a drive of the drive signal so as to discharge an electrostatic charge to the ground pad.