US Patent 12089395 Semiconductor device and semiconductor memory device

A semiconductor device of an embodiment is provided with: an oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode; a gate insulating layer; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; a first conductive layer provided at least one of positions between the first region and the first electrode or between the second region and the second electrode and containing a first metal element and at least one element of oxygen (O) or nitrogen (N); and a second conductive layer provided between the oxide semiconductor layer and the first conductive layer and containing oxygen (O) and at least one element selected from indium (In), zinc (Zn), tin (Sn), or cadmium (Cd). The second conductive layer is thicker than the first conductive layer.